On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire
- 作者: Zubrilov A.1, Gorbunov R.1, Latishev F.1, Bochkareva N.1, Lelikov Y.1, Tarkhin D.1, Smirnov A.1, Davydov V.1, Sheremet I.2, Shreter Y.1, Voronenkov V.1, Virko M.3, Kogotkov V.3, Leonidov A.3, Pinchuk A.1
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隶属关系:
- Ioffe Physical–Technical Institute
- Financial University under the Government of the Russian Federation
- Peter the Great St. Petersburg Polytechnic University
- 期: 卷 51, 编号 1 (2017)
- 页面: 115-121
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199365
- DOI: https://doi.org/10.1134/S1063782617010249
- ID: 199365
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详细
The intense absorption of CO2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm2. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm2 at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.
作者简介
A. Zubrilov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
R. Gorbunov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
F. Latishev
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Bochkareva
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
Y. Lelikov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Tarkhin
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Smirnov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Davydov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Sheremet
Financial University under the Government of the Russian Federation
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, Moscow, 125993
Y. Shreter
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Voronenkov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Virko
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
V. Kogotkov
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
A. Leonidov
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
A. Pinchuk
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021