Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures
- 作者: Ivlev K.1, Roslikov V.1, Bolotov V.1, Knyazev E.1, Ponomareva I.1, Kan V.1, Davletkildeev N.1
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隶属关系:
- Omsk Scientific Center, Siberian Branch
- 期: 卷 51, 编号 1 (2017)
- 页面: 49-53
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199307
- DOI: https://doi.org/10.1134/S1063782617010043
- ID: 199307
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详细
The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of Ebr ~ 104–105 V/cm. Multilayered “porous silicon-on-insulator” structures are shown to be promising for integrated chemical micro- and nanosensors.
作者简介
K. Ivlev
Omsk Scientific Center, Siberian Branch
Email: kan@obisp.oscsbras.ru
俄罗斯联邦, Omsk, 644024
V. Roslikov
Omsk Scientific Center, Siberian Branch
Email: kan@obisp.oscsbras.ru
俄罗斯联邦, Omsk, 644024
V. Bolotov
Omsk Scientific Center, Siberian Branch
Email: kan@obisp.oscsbras.ru
俄罗斯联邦, Omsk, 644024
E. Knyazev
Omsk Scientific Center, Siberian Branch
Email: kan@obisp.oscsbras.ru
俄罗斯联邦, Omsk, 644024
I. Ponomareva
Omsk Scientific Center, Siberian Branch
Email: kan@obisp.oscsbras.ru
俄罗斯联邦, Omsk, 644024
V. Kan
Omsk Scientific Center, Siberian Branch
编辑信件的主要联系方式.
Email: kan@obisp.oscsbras.ru
俄罗斯联邦, Omsk, 644024
N. Davletkildeev
Omsk Scientific Center, Siberian Branch
Email: kan@obisp.oscsbras.ru
俄罗斯联邦, Omsk, 644024