Resonant features of the terahertz generation in semiconductor nanowires

V. N. Trukhin; A. D. Bouravleuv; I. A. Mustafin; G. E. Cirlin; D. I. Kuritsyn; V. V. Rumyantsev; S. V. Morosov; J. P. Kakko; T. Huhtio; H. Lipsanen

doi:10.1134/S1063782616120241

Resonant features of the terahertz generation in semiconductor nanowires

作者: Trukhin V.¹^,2, Bouravleuv A.³, Mustafin I.¹^,2, Cirlin G.³, Kuritsyn D.⁴, Rumyantsev V.⁴, Morosov S.³^,5, Kakko J.⁶, Huhtio T.⁶, Lipsanen H.⁶
隶属关系:
1. Ioffe Physical–Technical Institute
2. St. Petersburg National Research University of Information Technologies, Mechanics and Optics
3. St. Petersburg Academic University—Nanotechnology Research and Education Centre
4. Institute for Physics of Microstructures
5. Lobachevsky State University of Nizhny Novgorod (NNSU)
6. Department of Micro- and Nanosciences, Micronova
期: 卷 50, 编号 12 (2016)
页面: 1561-1565
栏目: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
URL: https://journals.rcsi.science/1063-7826/article/view/198756
DOI: https://doi.org/10.1134/S1063782616120241
ID: 198756

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The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

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Resonant features of the terahertz generation in semiconductor nanowires

全文:

详细

作者简介

V. Trukhin

A. Bouravleuv

I. Mustafin

G. Cirlin

D. Kuritsyn

V. Rumyantsev

S. Morosov

J. Kakko

T. Huhtio

H. Lipsanen