Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation
- 作者: Tomosh K.1, Pavlov A.1, Pavlov V.1, Khabibullin R.1, Arutyunyan S.1, Maltsev P.1
-
隶属关系:
- Institute of Ultra-High-Frequency Semiconductor Electronics
- 期: 卷 50, 编号 10 (2016)
- 页面: 1416-1420
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/198228
- DOI: https://doi.org/10.1134/S1063782616100225
- ID: 198228
如何引用文章
详细
The optimum mode of the in situ plasma-chemical etching of a Si3N4 passivating layer in C3F8/O2 medium is chosen for the case of fabricating AlGaN/AlN/GaN НЕМТs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si3N4 growth together with the heterostructure in one process on the AlGaN/AlN/GaN НЕМТ characteristics, transistors with gates without the insulator and with gates through Si3N4 slits are fabricated. The highest drain current of the AlGaN/AlN/GaN НЕМТ at 0 V at the gate is shown to be 1.5 times higher in the presence of Si3N4 than without it.
作者简介
K. Tomosh
Institute of Ultra-High-Frequency Semiconductor Electronics
编辑信件的主要联系方式.
Email: sky77781@mail.ru
俄罗斯联邦, Moscow, 117105
A. Pavlov
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
俄罗斯联邦, Moscow, 117105
V. Pavlov
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
俄罗斯联邦, Moscow, 117105
R. Khabibullin
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
俄罗斯联邦, Moscow, 117105
S. Arutyunyan
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
俄罗斯联邦, Moscow, 117105
P. Maltsev
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
俄罗斯联邦, Moscow, 117105