Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
- 作者: Bobrov M.1, Maleev N.1, Blokhin S.1, Kuzmenkov A.1,2, Vasil’ev A.1,2, Blokhin A.1, Guseva Y.1, Kulagina M.1, Zadiranov Y.1, Troshkov S.1, Lysak V.1,3, Ustinov V.1,2
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隶属关系:
- Ioffe Physical–Technical Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- National Research University of Information Technologies, Mechanics and Optics
- 期: 卷 50, 编号 10 (2016)
- 页面: 1390-1395
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198134
- DOI: https://doi.org/10.1134/S1063782616100092
- ID: 198134
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详细
The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture are studied. It is found that radiation polarization is always directed along the minor diagonal of the rhomboidal aperture (along the [\(\overline 1 \) 10] direction) for all single-mode VCSELs. The numerical simulation of carrier transport does not reveal the significant anisotropy of carrier injection to the active region. Furthermore, an analysis of the spatial distribution of the fundamental mode for two orthogonal polarizations within an effective waveguide model shows close transverse optical-confinement factors. Optical loss anisotropy in the asymmetric microcavity and/or gain anisotropy in the strained active region are the most likely mechanisms responsible for fixing the polarization.
作者简介
M. Bobrov
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
N. Maleev
Ioffe Physical–Technical Institute
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Blokhin
Ioffe Physical–Technical Institute
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Kuzmenkov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Vasil’ev
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Blokhin
Ioffe Physical–Technical Institute
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
Yu. Guseva
Ioffe Physical–Technical Institute
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
M. Kulagina
Ioffe Physical–Technical Institute
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
Yu. Zadiranov
Ioffe Physical–Technical Institute
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Troshkov
Ioffe Physical–Technical Institute
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Lysak
Ioffe Physical–Technical Institute; National Research University of Information Technologies, Mechanics and Optics
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; pr. Kronverkskii 49, St. Petersburg, 197101
V. Ustinov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: bobrov.mikh@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021