Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture


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Resumo

The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture are studied. It is found that radiation polarization is always directed along the minor diagonal of the rhomboidal aperture (along the [\(\overline 1 \) 10] direction) for all single-mode VCSELs. The numerical simulation of carrier transport does not reveal the significant anisotropy of carrier injection to the active region. Furthermore, an analysis of the spatial distribution of the fundamental mode for two orthogonal polarizations within an effective waveguide model shows close transverse optical-confinement factors. Optical loss anisotropy in the asymmetric microcavity and/or gain anisotropy in the strained active region are the most likely mechanisms responsible for fixing the polarization.

Sobre autores

M. Bobrov

Ioffe Physical–Technical Institute

Autor responsável pela correspondência
Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021

N. Maleev

Ioffe Physical–Technical Institute

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021

S. Blokhin

Ioffe Physical–Technical Institute

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Kuzmenkov

Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Vasil’ev

Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Blokhin

Ioffe Physical–Technical Institute

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021

Yu. Guseva

Ioffe Physical–Technical Institute

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021

M. Kulagina

Ioffe Physical–Technical Institute

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021

Yu. Zadiranov

Ioffe Physical–Technical Institute

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021

S. Troshkov

Ioffe Physical–Technical Institute

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021

V. Lysak

Ioffe Physical–Technical Institute; National Research University of Information Technologies, Mechanics and Optics

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021; pr. Kronverkskii 49, St. Petersburg, 197101

V. Ustinov

Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics Research and Engineering Center

Email: bobrov.mikh@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021


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