On methods of determining the band gap of semiconductor structures with p–n junctions
- 作者: Vikulin I.1, Korobitsyn B.1, Kriskiv S.1
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隶属关系:
- Ukrainian State Academy of Telecommunications
- 期: 卷 50, 编号 9 (2016)
- 页面: 1216-1219
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197896
- DOI: https://doi.org/10.1134/S1063782616090256
- ID: 197896
如何引用文章
详细
The possibility of determining the band gap of homogeneous p–n structures from the properties of the current–voltage characteristics at two temperatures (room temperature and temperatures 30 to 50°C higher) is shown. A working formula for the calculation is derived, and practical application of the formula in determining the band gap is illustrated by the example of p–n structures based on silicon, gallium arsenide, and gallium phosphide. The results are in agreement with commonly accepted data with an accuracy of 1%. In addition, the possibility of determining the band gap of homogeneous p–n structures from the capacitance–voltage characteristics recorded at the above-indicated temperatures is shown.
作者简介
I. Vikulin
Ukrainian State Academy of Telecommunications
Email: kriskiv2@yandex.ua
乌克兰, Odessa, 65021
B. Korobitsyn
Ukrainian State Academy of Telecommunications
Email: kriskiv2@yandex.ua
乌克兰, Odessa, 65021
S. Kriskiv
Ukrainian State Academy of Telecommunications
编辑信件的主要联系方式.
Email: kriskiv2@yandex.ua
乌克兰, Odessa, 65021