On methods of determining the band gap of semiconductor structures with p–n junctions
- Authors: Vikulin I.M.1, Korobitsyn B.V.1, Kriskiv S.K.1
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Affiliations:
- Ukrainian State Academy of Telecommunications
- Issue: Vol 50, No 9 (2016)
- Pages: 1216-1219
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197896
- DOI: https://doi.org/10.1134/S1063782616090256
- ID: 197896
Cite item
Abstract
The possibility of determining the band gap of homogeneous p–n structures from the properties of the current–voltage characteristics at two temperatures (room temperature and temperatures 30 to 50°C higher) is shown. A working formula for the calculation is derived, and practical application of the formula in determining the band gap is illustrated by the example of p–n structures based on silicon, gallium arsenide, and gallium phosphide. The results are in agreement with commonly accepted data with an accuracy of 1%. In addition, the possibility of determining the band gap of homogeneous p–n structures from the capacitance–voltage characteristics recorded at the above-indicated temperatures is shown.
About the authors
I. M. Vikulin
Ukrainian State Academy of Telecommunications
Email: kriskiv2@yandex.ua
Ukraine, Odessa, 65021
B. V. Korobitsyn
Ukrainian State Academy of Telecommunications
Email: kriskiv2@yandex.ua
Ukraine, Odessa, 65021
S. K. Kriskiv
Ukrainian State Academy of Telecommunications
Author for correspondence.
Email: kriskiv2@yandex.ua
Ukraine, Odessa, 65021