Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
- 作者: Altuhov V.1, Kasyanenko I.1, Sankin A.1, Bilalov B.2, Sigov A.3
-
隶属关系:
- Institute of Service, Tourism and Design (Branch)
- Dagestan State Technical University
- Moscow State Technical University of Radio Engineering, Electronics, and Automation
- 期: 卷 50, 编号 9 (2016)
- 页面: 1168-1172
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197828
- DOI: https://doi.org/10.1134/S1063782616090025
- ID: 197828
如何引用文章
详细
A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)1–x(AlN)x structures. The results of calculations are compared to experimental data.
作者简介
V. Altuhov
Institute of Service, Tourism and Design (Branch)
编辑信件的主要联系方式.
Email: altukhovv@mail.ru
俄罗斯联邦, pr. 40 Let Oktyabrya 56, Pyatigorsk, 357500
I. Kasyanenko
Institute of Service, Tourism and Design (Branch)
Email: altukhovv@mail.ru
俄罗斯联邦, pr. 40 Let Oktyabrya 56, Pyatigorsk, 357500
A. Sankin
Institute of Service, Tourism and Design (Branch)
Email: altukhovv@mail.ru
俄罗斯联邦, pr. 40 Let Oktyabrya 56, Pyatigorsk, 357500
B. Bilalov
Dagestan State Technical University
Email: altukhovv@mail.ru
俄罗斯联邦, pr. Imama Shamilya 70, Makhachkala, 367015
A. Sigov
Moscow State Technical University of Radio Engineering, Electronics, and Automation
Email: altukhovv@mail.ru
俄罗斯联邦, pr. Vernadskogo 78, Moscow, 119454