Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation
- 作者: Aleksandrov P.1, Baranova E.1, Budaragin V.1
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隶属关系:
- National Research Center “Kurchatov Institute,”
- 期: 卷 50, 编号 8 (2016)
- 页面: 1107-1111
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197733
- DOI: https://doi.org/10.1134/S1063782616080054
- ID: 197733
如何引用文章
详细
We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.
作者简介
P. Aleksandrov
National Research Center “Kurchatov Institute,”
编辑信件的主要联系方式.
Email: Alexandrov_PA@nrcki.ru
俄罗斯联邦, Moscow, 123098
E. Baranova
National Research Center “Kurchatov Institute,”
Email: Alexandrov_PA@nrcki.ru
俄罗斯联邦, Moscow, 123098
V. Budaragin
National Research Center “Kurchatov Institute,”
Email: Alexandrov_PA@nrcki.ru
俄罗斯联邦, Moscow, 123098