Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
- 作者: Kozlovskiy V.1,2, Krivobok V.1,2, Kuznetsov P.3, Nikolaev S.3, Onistchenko E.3, Pruchkina A.3, Temiryazev A.3
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隶属关系:
- Lebedev Physical Institute
- National Research Nuclear University MEPHI (Moscow Engineering Physics Institute)
- Kotel’nikov Institute of Radio-Engineering and Electronics
- 期: 卷 50, 编号 5 (2016)
- 页面: 688-693
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197165
- DOI: https://doi.org/10.1134/S1063782616050146
- ID: 197165
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详细
Strained epitaxial ZnSe layers are grown on GaAs substrates by the method of vapor-phase epitaxy from metal-organic compounds. It is found that Se nanoislands with a density of 108 to 109 cm–2 are formed at the surface of such layers. It is established that an increase in the size of Se islands and a decrease in their density take place after completion of growth. Annealing in a H2 atmosphere at a temperature higher than 260°C leads to the disappearance of Se islands and to a decrease in the surface roughness. It is shown that annealing does not lead to deterioration of the structural perfection of the epitaxial ZnSe films; rather, annealing gives rise to a decrease in the intensity of impurity–defect luminescence and to an increase in the intensity of intrinsic radiation near the bottom of the exciton band.
作者简介
V. Kozlovskiy
Lebedev Physical Institute; National Research Nuclear University MEPHI (Moscow Engineering Physics Institute)
Email: krivobok@lebedev.ru
俄罗斯联邦, Moscow, 119991; Moscow, 115409
V. Krivobok
Lebedev Physical Institute; National Research Nuclear University MEPHI (Moscow Engineering Physics Institute)
编辑信件的主要联系方式.
Email: krivobok@lebedev.ru
俄罗斯联邦, Moscow, 119991; Moscow, 115409
P. Kuznetsov
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141120
S. Nikolaev
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141120
E. Onistchenko
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141120
A. Pruchkina
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141120
A. Temiryazev
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141120