Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM
- 作者: Stefanovich G.1, Pergament A.1, Boriskov P.1, Kuroptev V.1, Stefanovich T.1
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隶属关系:
- Petrozavodsk State University
- 期: 卷 50, 编号 5 (2016)
- 页面: 639-645
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197104
- DOI: https://doi.org/10.1134/S1063782616050237
- ID: 197104
如何引用文章
详细
The main aspects of the synthesis and experimental research of oxide diode heterostructures are discussed with respect to their use as selector diodes, i.e., access elements in oxide resistive memory. It is shown that charge transfer in these materials differs significantly from the conduction mechanism in p–n junctions based on conventional semiconductors (Si, Ge, AIII–BV), and the model should take into account the electronic properties of oxides, primarily the low carrier drift mobility. It is found that an increase in the forward current requires an oxide with a small band gap (<1.3 eV) in the heterostructure composition. Heterostructures with Zn, In–Zn (IZO), Ti, Ni, and Cu oxides are studied; it is found that the CuO–IZO heterojunction has the highest forward current density (104 A/cm2).
作者简介
G. Stefanovich
Petrozavodsk State University
Email: v.a.kuroptev@gmail.com
俄罗斯联邦, pr. Lenina 33, Republic of Karelia, Petrozavodsk, 185910
A. Pergament
Petrozavodsk State University
Email: v.a.kuroptev@gmail.com
俄罗斯联邦, pr. Lenina 33, Republic of Karelia, Petrozavodsk, 185910
P. Boriskov
Petrozavodsk State University
Email: v.a.kuroptev@gmail.com
俄罗斯联邦, pr. Lenina 33, Republic of Karelia, Petrozavodsk, 185910
V. Kuroptev
Petrozavodsk State University
编辑信件的主要联系方式.
Email: v.a.kuroptev@gmail.com
俄罗斯联邦, pr. Lenina 33, Republic of Karelia, Petrozavodsk, 185910
T. Stefanovich
Petrozavodsk State University
Email: v.a.kuroptev@gmail.com
俄罗斯联邦, pr. Lenina 33, Republic of Karelia, Petrozavodsk, 185910