Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The correlation properties of the structure of nc-Si/a-Si:H films with different volume fractions of the crystalline phase are studied using 2D detrended fluctuation analysis. Study of the surface relief of experimental samples showed that with increasing in volume fraction of the crystalline phase in the nc-Si/a-Si:H films, the size and number of nanoclusters on their surface grow. The size of Si nanocrystals in the a-Si:H matrix (6–8 nm) indicates the formation of coarse nanoclusters due to the self-organization of Si nanocrystals in groups under laser radiation. According to 2D detrended fluctuation analysis data, the number of correlation vectors (harmonic components) in the nc-Si/a-Si:H film structure increased with an increase in the nanocrystal fraction in the films.

作者简介

A. Alpatov

Ryazan State Radio-Engineering University

编辑信件的主要联系方式.
Email: pgnv@mail.ru
俄罗斯联邦, Ryazan, 390005

S. Vikhrov

Ryazan State Radio-Engineering University

Email: pgnv@mail.ru
俄罗斯联邦, Ryazan, 390005

A. Kazanskii

Moscow State University

Email: pgnv@mail.ru
俄罗斯联邦, Moscow, 119991

V. Lyaskovskii

All-Russia Research Institute for Optical and Physical Measurements; Moscow Institute of Electronics and Mathematics

Email: pgnv@mail.ru
俄罗斯联邦, Moscow, 119361; Moscow, 109028

N. Rybin

Ryazan State Radio-Engineering University

Email: pgnv@mail.ru
俄罗斯联邦, Ryazan, 390005

N. Rybina

Ryazan State Radio-Engineering University

Email: pgnv@mail.ru
俄罗斯联邦, Ryazan, 390005

P. Forsh

Moscow State University

Email: pgnv@mail.ru
俄罗斯联邦, Moscow, 119991


版权所有 © Pleiades Publishing, Ltd., 2016
##common.cookie##