Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase
- 作者: Alpatov A.1, Vikhrov S.1, Kazanskii A.2, Lyaskovskii V.3,4, Rybin N.1, Rybina N.1, Forsh P.2
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隶属关系:
- Ryazan State Radio-Engineering University
- Moscow State University
- All-Russia Research Institute for Optical and Physical Measurements
- Moscow Institute of Electronics and Mathematics
- 期: 卷 50, 编号 5 (2016)
- 页面: 590-595
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/197063
- DOI: https://doi.org/10.1134/S1063782616050031
- ID: 197063
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详细
The correlation properties of the structure of nc-Si/a-Si:H films with different volume fractions of the crystalline phase are studied using 2D detrended fluctuation analysis. Study of the surface relief of experimental samples showed that with increasing in volume fraction of the crystalline phase in the nc-Si/a-Si:H films, the size and number of nanoclusters on their surface grow. The size of Si nanocrystals in the a-Si:H matrix (6–8 nm) indicates the formation of coarse nanoclusters due to the self-organization of Si nanocrystals in groups under laser radiation. According to 2D detrended fluctuation analysis data, the number of correlation vectors (harmonic components) in the nc-Si/a-Si:H film structure increased with an increase in the nanocrystal fraction in the films.
作者简介
A. Alpatov
Ryazan State Radio-Engineering University
编辑信件的主要联系方式.
Email: pgnv@mail.ru
俄罗斯联邦, Ryazan, 390005
S. Vikhrov
Ryazan State Radio-Engineering University
Email: pgnv@mail.ru
俄罗斯联邦, Ryazan, 390005
A. Kazanskii
Moscow State University
Email: pgnv@mail.ru
俄罗斯联邦, Moscow, 119991
V. Lyaskovskii
All-Russia Research Institute for Optical and Physical Measurements; Moscow Institute of Electronics and Mathematics
Email: pgnv@mail.ru
俄罗斯联邦, Moscow, 119361; Moscow, 109028
N. Rybin
Ryazan State Radio-Engineering University
Email: pgnv@mail.ru
俄罗斯联邦, Ryazan, 390005
N. Rybina
Ryazan State Radio-Engineering University
Email: pgnv@mail.ru
俄罗斯联邦, Ryazan, 390005
P. Forsh
Moscow State University
Email: pgnv@mail.ru
俄罗斯联邦, Moscow, 119991