Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
- 作者: Mintairov S.1, Emelyanov V.1, Rybalchenko D.1, Salii R.1, Timoshina N.1, Shvarts M.1, Kalyuzhnyy N.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 50, 编号 4 (2016)
- 页面: 517-522
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197008
- DOI: https://doi.org/10.1134/S1063782616040163
- ID: 197008
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详细
Heterostructures of metamorphic GaInAs photovoltaic converters (PVCs) are on GaAs substrates by the metal-organic chemical vapor deposition (MOCVD) method. It is shown that using a multilayer metamorphic buffer with a step of 2.5% in indium content and layer thicknesses of 120 nm provides the high quality of bulk layers subsequently grown on the buffer up to an indium content of 24%. PVCs with a long-wavelength photosensitivity edge up to 1300 nm and a quantum efficiency of ~80% in the spectral range 1050–1100 nm are fabricated. Analysis of the open-circuit voltage of the PVCs and diffusion lengths of minority carriers in the layers demonstrates that the density of misfit dislocations penetrating into the bulk layers increases at an indium content exceeding 10%.
作者简介
S. Mintairov
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: mintairov@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Emelyanov
Ioffe Physical–Technical Institute
Email: mintairov@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Rybalchenko
Ioffe Physical–Technical Institute
Email: mintairov@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
R. Salii
Ioffe Physical–Technical Institute
Email: mintairov@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Timoshina
Ioffe Physical–Technical Institute
Email: mintairov@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Shvarts
Ioffe Physical–Technical Institute
Email: mintairov@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Kalyuzhnyy
Ioffe Physical–Technical Institute
Email: mintairov@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021