Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon
- 作者: Chubenko E.1, Redko S.1, Sherstnyov A.1, Petrovich V.1, Kotov D.1, Bondarenko V.1
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隶属关系:
- Belarusian State University of Information and RadioElectronics
- 期: 卷 50, 编号 3 (2016)
- 页面: 372-376
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/196905
- DOI: https://doi.org/10.1134/S1063782616030040
- ID: 196905
如何引用文章
详细
The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.
作者简介
E. Chubenko
Belarusian State University of Information and RadioElectronics
编辑信件的主要联系方式.
Email: eugene.chubenko@gmail.com
白俄罗斯, Minsk, 220013
S. Redko
Belarusian State University of Information and RadioElectronics
Email: eugene.chubenko@gmail.com
白俄罗斯, Minsk, 220013
A. Sherstnyov
Belarusian State University of Information and RadioElectronics
Email: eugene.chubenko@gmail.com
白俄罗斯, Minsk, 220013
V. Petrovich
Belarusian State University of Information and RadioElectronics
Email: eugene.chubenko@gmail.com
白俄罗斯, Minsk, 220013
D. Kotov
Belarusian State University of Information and RadioElectronics
Email: eugene.chubenko@gmail.com
白俄罗斯, Minsk, 220013
V. Bondarenko
Belarusian State University of Information and RadioElectronics
Email: eugene.chubenko@gmail.com
白俄罗斯, Minsk, 220013