Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon


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Resumo

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

Sobre autores

E. Chubenko

Belarusian State University of Information and RadioElectronics

Autor responsável pela correspondência
Email: eugene.chubenko@gmail.com
Belarus, Minsk, 220013

S. Redko

Belarusian State University of Information and RadioElectronics

Email: eugene.chubenko@gmail.com
Belarus, Minsk, 220013

A. Sherstnyov

Belarusian State University of Information and RadioElectronics

Email: eugene.chubenko@gmail.com
Belarus, Minsk, 220013

V. Petrovich

Belarusian State University of Information and RadioElectronics

Email: eugene.chubenko@gmail.com
Belarus, Minsk, 220013

D. Kotov

Belarusian State University of Information and RadioElectronics

Email: eugene.chubenko@gmail.com
Belarus, Minsk, 220013

V. Bondarenko

Belarusian State University of Information and RadioElectronics

Email: eugene.chubenko@gmail.com
Belarus, Minsk, 220013


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