Информация об авторе
Mizerov, M.
Выпуск | Раздел | Название | Файл |
Том 50, № 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
Том 52, № 14 (2018) | Lasers and Optoelectronic Devices | Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure | |
Том 53, № 2 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method | |
Том 53, № 11 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching |