Информация об авторе
Loshkarev, I. D.
| Выпуск | Раздел | Название | Файл |
| Том 52, № 3 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands | |
| Том 53, № 4 (2019) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy |