Информация об авторе

Moiseev, E. I.

Выпуск Раздел Название Файл
Том 50, № 3 (2016) Physics of Semiconductor Devices Microdisk Injection Lasers for the 1.27-μm Spectral Range
Том 50, № 10 (2016) Physics of Semiconductor Devices Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
Том 51, № 2 (2017) Physics of Semiconductor Devices Specific features of waveguide recombination in laser structures with asymmetric barrier layers
Том 51, № 2 (2017) Fabrication, Treatment, and Testing of Materials and Structures Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates
Том 51, № 9 (2017) Electronic Properties of Semiconductors Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range
Том 52, № 12 (2018) Physics of Semiconductor Devices Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers
Том 53, № 2 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light
Том 53, № 8 (2019) Physics of Semiconductor Devices Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation
Том 53, № 14 (2019) Lasers and Optoelectronic Devices Record Low Threshold Current Density in Quantum Dot Microdisk Laser

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