Информация об авторе
Andreev, B. A.
| Выпуск | Раздел | Название | Файл |
| Том 50, № 2 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements | |
| Том 51, № 12 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen | |
| Том 53, № 10 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates | |
| Том 53, № 10 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |