Выпуск |
Раздел |
Название |
Файл |
Том 50, № 7 (2016) |
Surfaces, Interfaces, and Thin Films |
Indium nanowires at the silicon surface |
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Том 51, № 4 (2017) |
Surfaces, Interfaces, and Thin Films |
Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe |
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Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation |
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Том 52, № 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
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Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Atomic Force Microscopy Local Oxidation of GeO Thin Films |
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