Выпуск |
Раздел |
Название |
Файл |
Том 51, № 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Preparation and properties of Zn4Sb3-based thermoelectric material |
|
Том 51, № 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Experimental and theoretical study of the thermoelectric properties of copper selenide |
|
Том 51, № 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Structure of the Cu2Se compound produced by different methods |
|
Том 51, № 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Preparation and properties of Zn4Sb3-based thermoelectric material |
|
Том 51, № 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Determination of the thermoelectric efficiency of thermoelectric materials from measurements of linear series of branches for n- and p-types of conductivity |
|
Том 51, № 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Mechanism of resistive switching in films based on partially fluorinated graphene |
|
Том 53, № 1 (2019) |
Physics of Semiconductor Devices |
Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well |
|
Том 53, № 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices |
|