GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells
- Авторы: Dikareva N.1, Zvonkov B.1, Samartsev I.1, Nekorkin S.1, Baidus N.1, Dubinov A.1,2
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Учреждения:
- National Research Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Выпуск: Том 53, № 12 (2019)
- Страницы: 1709-1711
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207423
- DOI: https://doi.org/10.1134/S1063782619160085
- ID: 207423
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Аннотация
The results of studying a GaAs-based laser with InGaAs waveguide quantum wells, which operates at room temperature in the electric-pumping mode, are presented. The minimal generation threshold is 15 A. Stable lasing at a wavelength of 1010 nm is attained, and the width of the radiation pattern in the plane perpendicular to the structure layers is (10 ± 2)°.
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Об авторах
N. Dikareva
National Research Lobachevsky State University of Nizhny Novgorod
Автор, ответственный за переписку.
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
B. Zvonkov
National Research Lobachevsky State University of Nizhny Novgorod
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
I. Samartsev
National Research Lobachevsky State University of Nizhny Novgorod
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
S. Nekorkin
National Research Lobachevsky State University of Nizhny Novgorod
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
N. Baidus
National Research Lobachevsky State University of Nizhny Novgorod
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
A. Dubinov
National Research Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950