High-Voltage AlInGaN LED Chips
- Авторы: Markov L.1, Kukushkin M.1, Pavlyuchenko A.1, Smirnova I.1, Itkinson G.2, Osipov O.2
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Учреждения:
- Ioffe Institute
- ZAO “IRSET-Center” Innovation Company
- Выпуск: Том 53, № 11 (2019)
- Страницы: 1529-1534
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207320
- DOI: https://doi.org/10.1134/S1063782619110125
- ID: 207320
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Аннотация
A high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25 × 1.25 mm is intended for a working current of 20 mA and a forward voltage of 48 V. To improve the current-distribution uniformity over the active region of the chip elements and to minimize the losses of the element area occupied by the n-type contact, the n-type contact pads in them are arranged inside the p-type contact region due to the two-level metallization layout with an intermediate insulating layer of dielectric. The arrangement topology of the contact pads is developed using numerical simulation. An increase in the quantum efficiency of the chip is provided by the application of combinations of metals with a high reflectance at the LED emission wavelength, which are used when fabricating n- and p-type contacts as well as current-carrying strips.
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Об авторах
L. Markov
Ioffe Institute
Автор, ответственный за переписку.
Email: I.markov@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Kukushkin
Ioffe Institute
Email: I.markov@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Pavlyuchenko
Ioffe Institute
Email: I.markov@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Smirnova
Ioffe Institute
Email: I.markov@mail.ioffe.ru
Россия, St. Petersburg, 194021
G. Itkinson
ZAO “IRSET-Center” Innovation Company
Email: I.markov@mail.ioffe.ru
Россия, St. Petersburg, 194156
O. Osipov
ZAO “IRSET-Center” Innovation Company
Email: I.markov@mail.ioffe.ru
Россия, St. Petersburg, 194156