Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition
- Авторы: Shengurov V.1, Filatov D.1, Denisov S.1, Chalkov V.1, Alyabina N.1, Zaitsev A.1
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Учреждения:
- Lobachevsky State University of Nizhny Novgorod
- Выпуск: Том 53, № 9 (2019)
- Страницы: 1238-1241
- Раздел: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/206889
- DOI: https://doi.org/10.1134/S1063782619090203
- ID: 206889
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Аннотация
n+-Ge/p+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the n+-Ge layers with a donor impurity (P) to a concentration of >1 × 1019 cm–3 is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current–voltage characteristics of tunnel diodes.
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Об авторах
V. Shengurov
Lobachevsky State University of Nizhny Novgorod
Автор, ответственный за переписку.
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
D. Filatov
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
S. Denisov
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
V. Chalkov
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
N. Alyabina
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
A. Zaitsev
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950