GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

D. S. Abramkin; M. O. Petrushkov; M. A. Putyato; B. R. Semyagin; E. A. Emelyanov; V. V. Preobrazhenskii; A. K. Gutakovskii; T. S. Shamirzaev

doi:10.1134/S1063782619090021

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Авторы: Abramkin D.¹^,2, Petrushkov M.¹, Putyato M.¹, Semyagin B.¹, Emelyanov E.¹, Preobrazhenskii V.¹, Gutakovskii A.¹^,2, Shamirzaev T.¹^,2^,3
Учреждения:
1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
2. Novosibirsk State University
3. Ural Federal University
Выпуск: Том 53, № 9 (2019)
Страницы: 1143-1147
Раздел: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
URL: https://journals.rcsi.science/1063-7826/article/view/206691
DOI: https://doi.org/10.1134/S1063782619090021
ID: 206691

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Аннотация
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Аннотация

Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

Ключевые слова

hybrid substrates, photoluminescence, GaP on Si, molecular-beam epitaxy, quantum wells

Об авторах

D. Abramkin

Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University

Автор, ответственный за переписку.
Email: dalamber.07@mail.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090