GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
- Authors: Abramkin D.S.1,2, Petrushkov M.O.1, Putyato M.A.1, Semyagin B.R.1, Emelyanov E.A.1, Preobrazhenskii V.V.1, Gutakovskii A.K.1,2, Shamirzaev T.S.1,2,3
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Affiliations:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Ural Federal University
- Issue: Vol 53, No 9 (2019)
- Pages: 1143-1147
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/206691
- DOI: https://doi.org/10.1134/S1063782619090021
- ID: 206691
Cite item
Abstract
Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.
About the authors
D. S. Abramkin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Author for correspondence.
Email: dalamber.07@mail.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
M. O. Petrushkov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dalamber.07@mail.ru
Russian Federation, Novosibirsk, 630090
M. A. Putyato
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dalamber.07@mail.ru
Russian Federation, Novosibirsk, 630090
B. R. Semyagin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dalamber.07@mail.ru
Russian Federation, Novosibirsk, 630090
E. A. Emelyanov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dalamber.07@mail.ru
Russian Federation, Novosibirsk, 630090
V. V. Preobrazhenskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dalamber.07@mail.ru
Russian Federation, Novosibirsk, 630090
A. K. Gutakovskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: dalamber.07@mail.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
T. S. Shamirzaev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University; Ural Federal University
Email: dalamber.07@mail.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090; Yekaterinburg, 620002