Отправить статью по E-mail Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates
- Авторы: Abramkin D.1,2, Shamirzaev T.1,2,3
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Учреждения:
- Rzhanov Institute for Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Ural Federal University
- Выпуск: Том 53, № 5 (2019)
- Страницы: 703-710
- Раздел: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206216
- DOI: https://doi.org/10.1134/S1063782619050026
- ID: 206216
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Аннотация
Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III–V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.
Об авторах
D. Abramkin
Rzhanov Institute for Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Автор, ответственный за переписку.
Email: demid@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
T. Shamirzaev
Rzhanov Institute for Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University; Ural Federal University
Email: demid@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090; Yekaterinburg, 620002
