Enviar artigo por via de e-mail Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates
- Autores: Abramkin D.1,2, Shamirzaev T.1,2,3
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Afiliações:
- Rzhanov Institute for Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Ural Federal University
- Edição: Volume 53, Nº 5 (2019)
- Páginas: 703-710
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206216
- DOI: https://doi.org/10.1134/S1063782619050026
- ID: 206216
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Resumo
Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III–V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.
Sobre autores
D. Abramkin
Rzhanov Institute for Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Autor responsável pela correspondência
Email: demid@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
T. Shamirzaev
Rzhanov Institute for Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University; Ural Federal University
Email: demid@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090; Yekaterinburg, 620002
