High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects
- Авторы: Kyuregyan A.1
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Учреждения:
- “Energomodul” Scientific and Production Association
- Выпуск: Том 53, № 4 (2019)
- Страницы: 519-523
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205985
- DOI: https://doi.org/10.1134/S1063782619040183
- ID: 205985
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Аннотация
The self-heating effects of optoelectronic switches based on vertical high-voltage structures with p–n junctions (Vertical Photoactivated Semiconductor Switches, VPSS) operating in the high-frequency mode are theoretically studied for the first time. It is shown that the strong temperature dependence of the control-radiation absorbance κ(T) is a major factor controlling the maximum switching frequency fmax and the corresponding maximum crystal temperature Tmax, as well as the temperature T and current density j distributions over the device area. Two-dimensional analysis of the simplest electrothermal model of a VPSS embedded into a double coaxial forming line shows that an increase in the switching frequency f leads to current displacement to the device periphery where the temperature is minimum. However, the T and j distributions over the device area remain stable at f < fmax and T < Tmax. Certainly, fmax and Tmax depend on the control-radiation pulse energy, pulse switching power, and heat-removal conditions. For the VPSS based on indirect-gap semiconductors (Si, SiC), they vary within 20–120 kHz and 120–160°C which is quite sufficient for practical applications. However, VPSSs based on direct-gap semiconductors (GaAs, InP) are in fact inapplicable to operation in high-frequency modes due to the fact that the dependence κ(T) is too sharp.
Об авторах
A. Kyuregyan
“Energomodul” Scientific and Production Association
Автор, ответственный за переписку.
Email: semlab@yandex.ru
Россия, Moscow, 109052