Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices
- Авторы: Tarasov A.1,2, Ovchinnikov S.1,2, Varnakov S.1, Yakovlev I.1, Smolyarova T.1,2, Baron F.1, Rautskii M.1, Bondarev I.1,2, Lukyanenko A.1,2, Volkov N.1
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Учреждения:
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS
- Institute of Engineering Physics and Radio Electronics, Siberian Federal University
- Выпуск: Том 52, № 14 (2018)
- Страницы: 1875-1878
- Раздел: Spin-Related Phenomena in Nanostructures
- URL: https://journals.rcsi.science/1063-7826/article/view/205104
- DOI: https://doi.org/10.1134/S1063782618140312
- ID: 205104
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Аннотация
CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding their functionality. The most promising is the research and development of spintronic devices, which will allow using both electron charge and spin degrees of freedom for transmission, storage and processing of information. In this work we report the fabrication process of 3-terminal (3-T) ferromagnet/silicon devices of two types. First is the planar Fe3Si/Si 3-T structure with 5 μm gap between closest ferromagnetic electrodes. Second is silicon nanowire back-gate transistor with Fe film source and drain synthesized on SOI substrate. Transport and magnetotransport properties of both devices are investigated.
Об авторах
A. Tarasov
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Автор, ответственный за переписку.
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk; Krasnoyarsk
S. Ovchinnikov
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk; Krasnoyarsk
S. Varnakov
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk
I. Yakovlev
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk
T. Smolyarova
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk; Krasnoyarsk
F. Baron
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk
M. Rautskii
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk
I. Bondarev
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk; Krasnoyarsk
A. Lukyanenko
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk; Krasnoyarsk
N. Volkov
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk