Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs
- Авторы: Tyaginov S.1,2, Linten D.3, Vexler M.2, Hellings G.3, Grill A.1, Chasin A.3, Jech M.1, Kaczer B.3, Makarov A.1, Grasser T.1
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Учреждения:
- TU Vienna, Institute for Microelectronics
- Ioffe Institute
- IMEC
- Выпуск: Том 52, № 13 (2018)
- Страницы: 1738-1742
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204906
- DOI: https://doi.org/10.1134/S1063782618130183
- ID: 204906
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Аннотация
The effect of the geometric parameters of Fin field-effect transistors (FinFETs) on hot-carrier degradation (HCD) in these devices is theoretically studied. To this end, a model is used, in which three subproblems constituting the physical phenomenon of HCD are considered: carrier transport in semiconductor structures, description of microscopic defect formation mechanisms, and simulation of degraded device characteristics. An analysis is performed by varying the gate length, fin width and height. It is shown that HCD becomes stronger under fixed stress conditions in transistors with shorter channels or wider fins, while the channel height does not substantially affect HCD. This information can be important for optimizing the architecture of transistors with the fin-shaped channel to suppress degradation effects.
Об авторах
S. Tyaginov
TU Vienna, Institute for Microelectronics; Ioffe Institute
Email: vexler@mail.ioffe.ru
Австрия, Vienna, 1040; St. Petersburg, 194021
D. Linten
IMEC
Email: vexler@mail.ioffe.ru
Бельгия, Kapeldreef 75, Leuven, 3001
M. Vexler
Ioffe Institute
Автор, ответственный за переписку.
Email: vexler@mail.ioffe.ru
Россия, St. Petersburg, 194021
G. Hellings
IMEC
Email: vexler@mail.ioffe.ru
Бельгия, Kapeldreef 75, Leuven, 3001
A. Grill
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Австрия, Vienna, 1040
A. Chasin
IMEC
Email: vexler@mail.ioffe.ru
Бельгия, Kapeldreef 75, Leuven, 3001
M. Jech
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Австрия, Vienna, 1040
B. Kaczer
IMEC
Email: vexler@mail.ioffe.ru
Бельгия, Kapeldreef 75, Leuven, 3001
A. Makarov
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Австрия, Vienna, 1040
T. Grasser
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Австрия, Vienna, 1040