Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs
- Authors: Tyaginov S.E.1,2, Linten D.3, Vexler M.I.2, Hellings G.3, Grill A.1, Chasin A.3, Jech M.1, Kaczer B.3, Makarov A.A.1, Grasser T.1
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Affiliations:
- TU Vienna, Institute for Microelectronics
- Ioffe Institute
- IMEC
- Issue: Vol 52, No 13 (2018)
- Pages: 1738-1742
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204906
- DOI: https://doi.org/10.1134/S1063782618130183
- ID: 204906
Cite item
Abstract
The effect of the geometric parameters of Fin field-effect transistors (FinFETs) on hot-carrier degradation (HCD) in these devices is theoretically studied. To this end, a model is used, in which three subproblems constituting the physical phenomenon of HCD are considered: carrier transport in semiconductor structures, description of microscopic defect formation mechanisms, and simulation of degraded device characteristics. An analysis is performed by varying the gate length, fin width and height. It is shown that HCD becomes stronger under fixed stress conditions in transistors with shorter channels or wider fins, while the channel height does not substantially affect HCD. This information can be important for optimizing the architecture of transistors with the fin-shaped channel to suppress degradation effects.
About the authors
S. E. Tyaginov
TU Vienna, Institute for Microelectronics; Ioffe Institute
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040; St. Petersburg, 194021
D. Linten
IMEC
Email: vexler@mail.ioffe.ru
Belgium, Kapeldreef 75, Leuven, 3001
M. I. Vexler
Ioffe Institute
Author for correspondence.
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. Hellings
IMEC
Email: vexler@mail.ioffe.ru
Belgium, Kapeldreef 75, Leuven, 3001
A. Grill
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040
A. Chasin
IMEC
Email: vexler@mail.ioffe.ru
Belgium, Kapeldreef 75, Leuven, 3001
M. Jech
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040
B. Kaczer
IMEC
Email: vexler@mail.ioffe.ru
Belgium, Kapeldreef 75, Leuven, 3001
A. A. Makarov
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040
T. Grasser
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040