Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut
- Авторы: Drozdov Y.1, Khrikin O.1, Yunin P.1,2
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Учреждения:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- Выпуск: Том 52, № 11 (2018)
- Страницы: 1491-1494
- Раздел: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204550
- DOI: https://doi.org/10.1134/S1063782618110088
- ID: 204550
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Аннотация
The deformation of a (0001)GaN epitaxial layer on the (11\(\bar {2}\)0) sapphire a-cut is studied by X-ray diffractometry. Anisotropic-layer deformation is calculated by reference data on the thermal expansion coefficients of gallium nitride and sapphire. A comparison of the calculated and experimental deformation confirms the hypothesis on the thermoelastic character of GaN deformation on the sapphire a-cut. This result makes it possible, in particular, to assess theoretically the elastic deformation and piezoelectric field in pseudomorphic heterostructures with GaN layers on the sapphire a-cut as a virtual substrate or a buffer layer.
Об авторах
Yu. Drozdov
Institute for Physics of Microstructures, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: drozdyu@ipmras.ru
Россия, Nizhny Novgorod, 603950
O. Khrikin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: drozdyu@ipmras.ru
Россия, Nizhny Novgorod, 603950
P. Yunin
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: drozdyu@ipmras.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950