Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate
- Авторы: Aleksandrov O.1, Mokrushina S.1
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Учреждения:
- St. Petersburg State Electrotechnical University “LETI”
- Выпуск: Том 52, № 6 (2018)
- Страницы: 783-788
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/203540
- DOI: https://doi.org/10.1134/S1063782618060027
- ID: 203540
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Аннотация
A quantitative model for charge accumulation in an undergate dielectric during tunneling electron injection from a gate according to the Fowler–Nordheim mechanism is developed. The model takes into account electron and hole capture at hydrogen-free and hydrogen-related traps as well as the generation of surface states during the interaction of holes with hydrogen-related centers. The experimental dependences of the threshold voltage shift and gate voltage shift of n- and p-channel MOS (metal–oxide–semiconductor) transistors on the injected charge in the constant current mode are analyzed based on the model.
Об авторах
O. Aleksandrov
St. Petersburg State Electrotechnical University “LETI”
Автор, ответственный за переписку.
Email: Aleksandr_ov@mail.ru
Россия, St. Petersburg, 197376
S. Mokrushina
St. Petersburg State Electrotechnical University “LETI”
Email: Aleksandr_ov@mail.ru
Россия, St. Petersburg, 197376