Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate
- Autores: Aleksandrov O.1, Mokrushina S.1
-
Afiliações:
- St. Petersburg State Electrotechnical University “LETI”
- Edição: Volume 52, Nº 6 (2018)
- Páginas: 783-788
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/203540
- DOI: https://doi.org/10.1134/S1063782618060027
- ID: 203540
Citar
Resumo
A quantitative model for charge accumulation in an undergate dielectric during tunneling electron injection from a gate according to the Fowler–Nordheim mechanism is developed. The model takes into account electron and hole capture at hydrogen-free and hydrogen-related traps as well as the generation of surface states during the interaction of holes with hydrogen-related centers. The experimental dependences of the threshold voltage shift and gate voltage shift of n- and p-channel MOS (metal–oxide–semiconductor) transistors on the injected charge in the constant current mode are analyzed based on the model.
Sobre autores
O. Aleksandrov
St. Petersburg State Electrotechnical University “LETI”
Autor responsável pela correspondência
Email: Aleksandr_ov@mail.ru
Rússia, St. Petersburg, 197376
S. Mokrushina
St. Petersburg State Electrotechnical University “LETI”
Email: Aleksandr_ov@mail.ru
Rússia, St. Petersburg, 197376