Отправить статью по E-mail MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates
- Авторы: Reznik R.1,2,3,4, Kotlyar K.1, Soshnikov I.1,3, Kukushkin S.5, Osipov A.5, Cirlin G.1,2,3,4
-
Учреждения:
- St. Petersburg Academic University Russian Academy of Sciences
- ITMO University
- Institute for Analytical Instrumentation Russian Academy of Sciences
- Peter the Great Polytechnic University
- Institute of Problems of Mechanical Engineering Russian Academy of Science
- Выпуск: Том 52, № 5 (2018)
- Страницы: 651-653
- Раздел: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203292
- DOI: https://doi.org/10.1134/S1063782618050251
- ID: 203292
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.
Об авторах
R. Reznik
St. Petersburg Academic University Russian Academy of Sciences; ITMO University; Institute for Analytical Instrumentation Russian Academy of Sciences; Peter the Great Polytechnic University
Автор, ответственный за переписку.
Email: moment92@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251
K. Kotlyar
St. Petersburg Academic University Russian Academy of Sciences
Email: moment92@mail.ru
Россия, St. Petersburg, 194021
I. Soshnikov
St. Petersburg Academic University Russian Academy of Sciences; Institute for Analytical Instrumentation Russian Academy of Sciences
Email: moment92@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 190103
S. Kukushkin
Institute of Problems of Mechanical Engineering Russian Academy of Science
Email: moment92@mail.ru
Россия, St. Petersburg, 199178
A. Osipov
Institute of Problems of Mechanical Engineering Russian Academy of Science
Email: moment92@mail.ru
Россия, St. Petersburg, 199178
G. Cirlin
St. Petersburg Academic University Russian Academy of Sciences; ITMO University; Institute for Analytical Instrumentation Russian Academy of Sciences; Peter the Great Polytechnic University
Email: moment92@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251
