Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films
- Авторы: Smirnov V.1, Mokrushin A.2, Denisov N.1, Dobrovolskii Y.1
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Учреждения:
- Institute of Problems of Chemical Physics
- Institute of Microelectronics Technology and High Purity Materials
- Выпуск: Том 52, № 3 (2018)
- Страницы: 352-358
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202617
- DOI: https://doi.org/10.1134/S106378261803020X
- ID: 202617
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Аннотация
Proton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility of positive charges in Nafion and the current gain are higher by 2–3 orders of magnitude compared with graphene oxide. The negative ion current in graphene-oxide films at positive bias voltage is significant compared with the proton current (up to ~10%), while it is almost lacking in Nafion films (<1%).
Об авторах
V. Smirnov
Institute of Problems of Chemical Physics
Автор, ответственный за переписку.
Email: vas@icp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
A. Mokrushin
Institute of Microelectronics Technology and High Purity Materials
Email: vas@icp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
N. Denisov
Institute of Problems of Chemical Physics
Email: vas@icp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
Yu. Dobrovolskii
Institute of Problems of Chemical Physics
Email: vas@icp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432