Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure
- Авторы: Zhukov N.1, Kabanov V.2, Mihaylov A.2, Mosiyash D.1, Pereverzev Y.2, Hazanov A.1, Shishkin M.2
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Учреждения:
- OOO Volga-Svet
- Saratov State University
- Выпуск: Том 52, № 1 (2018)
- Страницы: 78-83
- Раздел: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202261
- DOI: https://doi.org/10.1134/S1063782618010256
- ID: 202261
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Аннотация
The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the localization effects of states in the bulk and surface region of submicron grains. The phenomena of current limitation and lowfield emission characteristic of quantum dots are revealed and studied. The results can be used in studies and in the development of multigrain structures for gas and optical sensors, detectors, and emitters of infrared and terahertz ranges.
Об авторах
N. Zhukov
OOO Volga-Svet
Email: yaroslavpereverzev@gmail.com
Россия, Saratov, 410033
V. Kabanov
Saratov State University
Email: yaroslavpereverzev@gmail.com
Россия, Saratov, 410012
A. Mihaylov
Saratov State University
Email: yaroslavpereverzev@gmail.com
Россия, Saratov, 410012
D. Mosiyash
OOO Volga-Svet
Email: yaroslavpereverzev@gmail.com
Россия, Saratov, 410033
Ya. Pereverzev
Saratov State University
Автор, ответственный за переписку.
Email: yaroslavpereverzev@gmail.com
Россия, Saratov, 410012
A. Hazanov
OOO Volga-Svet
Email: yaroslavpereverzev@gmail.com
Россия, Saratov, 410033
M. Shishkin
Saratov State University
Email: yaroslavpereverzev@gmail.com
Россия, Saratov, 410012