Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure
- Авторлар: Zhukov N.1, Kabanov V.2, Mihaylov A.2, Mosiyash D.1, Pereverzev Y.2, Hazanov A.1, Shishkin M.2
-
Мекемелер:
- OOO Volga-Svet
- Saratov State University
- Шығарылым: Том 52, № 1 (2018)
- Беттер: 78-83
- Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202261
- DOI: https://doi.org/10.1134/S1063782618010256
- ID: 202261
Дәйексөз келтіру
Аннотация
The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the localization effects of states in the bulk and surface region of submicron grains. The phenomena of current limitation and lowfield emission characteristic of quantum dots are revealed and studied. The results can be used in studies and in the development of multigrain structures for gas and optical sensors, detectors, and emitters of infrared and terahertz ranges.
Авторлар туралы
N. Zhukov
OOO Volga-Svet
Email: yaroslavpereverzev@gmail.com
Ресей, Saratov, 410033
V. Kabanov
Saratov State University
Email: yaroslavpereverzev@gmail.com
Ресей, Saratov, 410012
A. Mihaylov
Saratov State University
Email: yaroslavpereverzev@gmail.com
Ресей, Saratov, 410012
D. Mosiyash
OOO Volga-Svet
Email: yaroslavpereverzev@gmail.com
Ресей, Saratov, 410033
Ya. Pereverzev
Saratov State University
Хат алмасуға жауапты Автор.
Email: yaroslavpereverzev@gmail.com
Ресей, Saratov, 410012
A. Hazanov
OOO Volga-Svet
Email: yaroslavpereverzev@gmail.com
Ресей, Saratov, 410033
M. Shishkin
Saratov State University
Email: yaroslavpereverzev@gmail.com
Ресей, Saratov, 410012