Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure
- Authors: Zhukov N.D.1, Kabanov V.F.2, Mihaylov A.I.2, Mosiyash D.S.1, Pereverzev Y.E.2, Hazanov A.A.1, Shishkin M.I.2
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Affiliations:
- OOO Volga-Svet
- Saratov State University
- Issue: Vol 52, No 1 (2018)
- Pages: 78-83
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202261
- DOI: https://doi.org/10.1134/S1063782618010256
- ID: 202261
Cite item
Abstract
The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the localization effects of states in the bulk and surface region of submicron grains. The phenomena of current limitation and lowfield emission characteristic of quantum dots are revealed and studied. The results can be used in studies and in the development of multigrain structures for gas and optical sensors, detectors, and emitters of infrared and terahertz ranges.
About the authors
N. D. Zhukov
OOO Volga-Svet
Email: yaroslavpereverzev@gmail.com
Russian Federation, Saratov, 410033
V. F. Kabanov
Saratov State University
Email: yaroslavpereverzev@gmail.com
Russian Federation, Saratov, 410012
A. I. Mihaylov
Saratov State University
Email: yaroslavpereverzev@gmail.com
Russian Federation, Saratov, 410012
D. S. Mosiyash
OOO Volga-Svet
Email: yaroslavpereverzev@gmail.com
Russian Federation, Saratov, 410033
Ya. E. Pereverzev
Saratov State University
Author for correspondence.
Email: yaroslavpereverzev@gmail.com
Russian Federation, Saratov, 410012
A. A. Hazanov
OOO Volga-Svet
Email: yaroslavpereverzev@gmail.com
Russian Federation, Saratov, 410033
M. I. Shishkin
Saratov State University
Email: yaroslavpereverzev@gmail.com
Russian Federation, Saratov, 410012