Influence of the samarium impurity on the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor
- Авторы: Mekhtiyeva S.1, Atayeva S.1, Isayev A.1, Zeynalov V.1
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Учреждения:
- Abdullayev Institute of Physics
- Выпуск: Том 51, № 6 (2017)
- Страницы: 777-782
- Раздел: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/200075
- DOI: https://doi.org/10.1134/S1063782617060215
- ID: 200075
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Аннотация
X-ray diffraction and atomic-force microscopy are used to study the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor films and the influence exerted on these films by doping with samarium. The parameters of the first sharp diffraction peak (FSDP), observed in X-ray diffraction patterns, are used to determine the numerical values of the local structure parameters, such as the “quasiperiod” of density fluctuations, correlation length [size of medium-range-order (MRO) regions], and nanovoid diameters. In addition, the numerical values of the roughness-amplitude parameters are determined. It is found that the disorder in the atomic structure and the irregularities on the surface of the films under study become more pronounced with increasing percentage content of the samarium impurity.
Об авторах
S. Mekhtiyeva
Abdullayev Institute of Physics
Email: seva_atayeva@mail.ru
Азербайджан, Baku, Az-1143
S. Atayeva
Abdullayev Institute of Physics
Автор, ответственный за переписку.
Email: seva_atayeva@mail.ru
Азербайджан, Baku, Az-1143
A. Isayev
Abdullayev Institute of Physics
Email: seva_atayeva@mail.ru
Азербайджан, Baku, Az-1143
V. Zeynalov
Abdullayev Institute of Physics
Email: seva_atayeva@mail.ru
Азербайджан, Baku, Az-1143