On the photoconductivity of TlInSe2
- Авторы: Ismailov N.1, Abilov C.1, Gasanova M.1
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Учреждения:
- Azerbaijan Technical University
- Выпуск: Том 51, № 5 (2017)
- Страницы: 632-635
- Раздел: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199893
- DOI: https://doi.org/10.1134/S1063782617050104
- ID: 199893
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Аннотация
The current–voltage (I–V) and photocurrent–light intensity (Ipc–Φ) characteristics and the photoconductivity relaxation kinetics of TlInSe2 single crystals are investigated. Anomalously long relaxation times (τ ≈ 103 s) and some other specific features of the photoconductivity are observed, which are explained within the barrier theory of inhomogeneous semiconductors. The heights of the drift and recombination barriers are found to be, respectively, Edr ≈ 0.1 eV and Er ≈ 0.45 eV.
Об авторах
N. Ismailov
Azerbaijan Technical University
Автор, ответственный за переписку.
Email: ismailovnamik@yahoo.com
Азербайджан, Baku, Az-1073
Ch. Abilov
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
Азербайджан, Baku, Az-1073
M. Gasanova
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
Азербайджан, Baku, Az-1073