On the photoconductivity of TlInSe2
- Autores: Ismailov N.1, Abilov C.1, Gasanova M.1
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Afiliações:
- Azerbaijan Technical University
- Edição: Volume 51, Nº 5 (2017)
- Páginas: 632-635
- Seção: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199893
- DOI: https://doi.org/10.1134/S1063782617050104
- ID: 199893
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Resumo
The current–voltage (I–V) and photocurrent–light intensity (Ipc–Φ) characteristics and the photoconductivity relaxation kinetics of TlInSe2 single crystals are investigated. Anomalously long relaxation times (τ ≈ 103 s) and some other specific features of the photoconductivity are observed, which are explained within the barrier theory of inhomogeneous semiconductors. The heights of the drift and recombination barriers are found to be, respectively, Edr ≈ 0.1 eV and Er ≈ 0.45 eV.
Sobre autores
N. Ismailov
Azerbaijan Technical University
Autor responsável pela correspondência
Email: ismailovnamik@yahoo.com
Azerbaijão, Baku, Az-1073
Ch. Abilov
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
Azerbaijão, Baku, Az-1073
M. Gasanova
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
Azerbaijão, Baku, Az-1073