On the photoconductivity of TlInSe2
- Авторлар: Ismailov N.1, Abilov C.1, Gasanova M.1
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Мекемелер:
- Azerbaijan Technical University
- Шығарылым: Том 51, № 5 (2017)
- Беттер: 632-635
- Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199893
- DOI: https://doi.org/10.1134/S1063782617050104
- ID: 199893
Дәйексөз келтіру
Аннотация
The current–voltage (I–V) and photocurrent–light intensity (Ipc–Φ) characteristics and the photoconductivity relaxation kinetics of TlInSe2 single crystals are investigated. Anomalously long relaxation times (τ ≈ 103 s) and some other specific features of the photoconductivity are observed, which are explained within the barrier theory of inhomogeneous semiconductors. The heights of the drift and recombination barriers are found to be, respectively, Edr ≈ 0.1 eV and Er ≈ 0.45 eV.
Авторлар туралы
N. Ismailov
Azerbaijan Technical University
Хат алмасуға жауапты Автор.
Email: ismailovnamik@yahoo.com
Әзірбайжан, Baku, Az-1073
Ch. Abilov
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
Әзірбайжан, Baku, Az-1073
M. Gasanova
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
Әзірбайжан, Baku, Az-1073