Specific features of the capacitance–voltage characteristics of a Cu–SiO2p-InSb MIS structure


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Resumo

The capacitance–voltage and conductance–voltage characteristics of InSb-based MIS structures are measured at different probe signal frequencies with the aim of studying the influence exerted by the technological-synthesis conditions on the capacitive properties of these structures. The influence of positive charge built into the insulator on the sample characteristics is discussed. This influence manifests itself as a sharp capacitance “switch” upon changing the polarity of a low-field (E < 106 V/cm) external signal.

Sobre autores

R. Aliev

Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center

Email: hadzhyGM@mail.ru
Rússia, Makhachkala, 367003

G. Gajiev

Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center

Autor responsável pela correspondência
Email: hadzhyGM@mail.ru
Rússia, Makhachkala, 367003

M. Gadzhialiev

Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center

Email: hadzhyGM@mail.ru
Rússia, Makhachkala, 367003

A. Ismailov

Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center; Dagestan State University

Email: hadzhyGM@mail.ru
Rússia, Makhachkala, 367003; Makhachkala, 367003

Z. Pirmagomedov

Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center

Email: hadzhyGM@mail.ru
Rússia, Makhachkala, 367003

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