Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors
- Авторы: Sherchenkov A.1, Kozyukhin S.2, Lazarenko P.1, Babich A.1, Bogoslovskiy N.3, Sagunova I.1, Redichev E.1
-
Учреждения:
- National Research University of Electronic Technology
- Kurnakov Institute of General and Inorganic Chemistry
- Ioffe Physical–Technical Institute
- Выпуск: Том 51, № 2 (2017)
- Страницы: 146-152
- Раздел: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199399
- DOI: https://doi.org/10.1134/S1063782617020191
- ID: 199399
Цитировать
Аннотация
The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors Ge2Sb2Te5, GeSb2Te5, and GeSb4Te7 are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb2Te3, which is important for targeted optimization of the phase change memory technology.
Об авторах
A. Sherchenkov
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Россия, Zelenograd, Moscow, 124498
S. Kozyukhin
Kurnakov Institute of General and Inorganic Chemistry
Автор, ответственный за переписку.
Email: sergkoz@igic.ras.ru
Россия, Moscow, 119991
P. Lazarenko
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Россия, Zelenograd, Moscow, 124498
A. Babich
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Россия, Zelenograd, Moscow, 124498
N. Bogoslovskiy
Ioffe Physical–Technical Institute
Email: sergkoz@igic.ras.ru
Россия, St. Petersburg, 194021
I. Sagunova
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Россия, Zelenograd, Moscow, 124498
E. Redichev
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Россия, Zelenograd, Moscow, 124498