Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors
- Authors: Sherchenkov A.A.1, Kozyukhin S.A.2, Lazarenko P.I.1, Babich A.V.1, Bogoslovskiy N.A.3, Sagunova I.V.1, Redichev E.N.1
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Affiliations:
- National Research University of Electronic Technology
- Kurnakov Institute of General and Inorganic Chemistry
- Ioffe Physical–Technical Institute
- Issue: Vol 51, No 2 (2017)
- Pages: 146-152
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199399
- DOI: https://doi.org/10.1134/S1063782617020191
- ID: 199399
Cite item
Abstract
The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors Ge2Sb2Te5, GeSb2Te5, and GeSb4Te7 are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb2Te3, which is important for targeted optimization of the phase change memory technology.
About the authors
A. A. Sherchenkov
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Russian Federation, Zelenograd, Moscow, 124498
S. A. Kozyukhin
Kurnakov Institute of General and Inorganic Chemistry
Author for correspondence.
Email: sergkoz@igic.ras.ru
Russian Federation, Moscow, 119991
P. I. Lazarenko
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Russian Federation, Zelenograd, Moscow, 124498
A. V. Babich
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Russian Federation, Zelenograd, Moscow, 124498
N. A. Bogoslovskiy
Ioffe Physical–Technical Institute
Email: sergkoz@igic.ras.ru
Russian Federation, St. Petersburg, 194021
I. V. Sagunova
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Russian Federation, Zelenograd, Moscow, 124498
E. N. Redichev
National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
Russian Federation, Zelenograd, Moscow, 124498