Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
- Авторы: Khabibullin R.1, Shchavruk N.1, Pavlov A.1, Ponomarev D.1, Tomosh K.1, Galiev R.1, Maltsev P.1, Zhukov A.2,3, Cirlin G.2,3, Zubov F.2, Alferov Z.2,3
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Учреждения:
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Saint Petersburg Academic University—Nanotechnology Research and Education Center
- Saint Petersburg Science Center
- Выпуск: Том 50, № 10 (2016)
- Страницы: 1377-1382
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198112
- DOI: https://doi.org/10.1134/S1063782616100134
- ID: 198112
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Аннотация
The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n+-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl3/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.
Об авторах
R. Khabibullin
Institute of Ultrahigh Frequency Semiconductor Electronics
Автор, ответственный за переписку.
Email: khabibullin@isvch.ru
Россия, Nagornyi pr. 7, str.5, Moscow, 117105
N. Shchavruk
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Россия, Nagornyi pr. 7, str.5, Moscow, 117105
A. Pavlov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Россия, Nagornyi pr. 7, str.5, Moscow, 117105
D. Ponomarev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Россия, Nagornyi pr. 7, str.5, Moscow, 117105
K. Tomosh
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Россия, Nagornyi pr. 7, str.5, Moscow, 117105
R. Galiev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Россия, Nagornyi pr. 7, str.5, Moscow, 117105
P. Maltsev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Россия, Nagornyi pr. 7, str.5, Moscow, 117105
A. Zhukov
Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center
Email: khabibullin@isvch.ru
Россия, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034
G. Cirlin
Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center
Email: khabibullin@isvch.ru
Россия, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034
F. Zubov
Saint Petersburg Academic University—Nanotechnology Research and Education Center
Email: khabibullin@isvch.ru
Россия, ul. Khlopina 8/3, St. Petersburg, 194021
Zh. Alferov
Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center
Email: khabibullin@isvch.ru
Россия, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034