Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties
- Авторы: Detochenko A.1, Denisov S.1,2, Drozdov M.2, Mashin A.1, Gavva V.3, Bulanov A.1,3, Nezhdanov A.1, Ezhevskii A.1, Stepikhova M.1,2, Chalkov V.1, Trushin V.1, Shengurov D.1,2, Shengurov V.1, Abrosimov N.4, Riemann H.4
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Учреждения:
- Nizhny Novgorod State University
- Institute for Physics of Microstructures
- Devyatykh Institute of Chemistry of High-Purity Substances
- Leibniz Institute for Crystal Growth
- Выпуск: Том 50, № 3 (2016)
- Страницы: 345-348
- Раздел: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196886
- DOI: https://doi.org/10.1134/S1063782616030064
- ID: 196886
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Аннотация
The technology of the growth of Si, Ge, and Si1–xGex layers by molecular-beam epitaxy with the use of a sublimation source of monoisotopic 30Si or 28Si and/or gas sources of monogermane 74GeH4 is demonstrated. All of the epitaxial layers are of high crystal quality. The secondary-ion mass spectroscopy data and Raman data suggest the high isotopic purity and structural perfection of the 30Si, 28Si, 74Ge, and 30Si1–x74Gex layers. The 30Si layers doped with Er exhibit an efficient photoluminescence signal.
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Об авторах
A. Detochenko
Nizhny Novgorod State University
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
S. Denisov
Nizhny Novgorod State University; Institute for Physics of Microstructures
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087
M. Drozdov
Institute for Physics of Microstructures
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603087
A. Mashin
Nizhny Novgorod State University
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
V. Gavva
Devyatykh Institute of Chemistry of High-Purity Substances
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
A. Bulanov
Nizhny Novgorod State University; Devyatykh Institute of Chemistry of High-Purity Substances
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Nezhdanov
Nizhny Novgorod State University
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
A. Ezhevskii
Nizhny Novgorod State University
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
M. Stepikhova
Nizhny Novgorod State University; Institute for Physics of Microstructures
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087
V. Chalkov
Nizhny Novgorod State University
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
V. Trushin
Nizhny Novgorod State University
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
D. Shengurov
Nizhny Novgorod State University; Institute for Physics of Microstructures
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087
V. Shengurov
Nizhny Novgorod State University
Автор, ответственный за переписку.
Email: shengurov@phys.unn.ru
Россия, Nizhny Novgorod, 603950
N. Abrosimov
Leibniz Institute for Crystal Growth
Email: shengurov@phys.unn.ru
Германия, Berlin, 12489
H. Riemann
Leibniz Institute for Crystal Growth
Email: shengurov@phys.unn.ru
Германия, Berlin, 12489